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| TYPE | DESCRIPTION |
| Mfr | Microsemi Corporation |
| Series | - |
| Package | Bulk |
| Product Status | OBSOLETE |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 357W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 14A |
| Input Capacitance (Ciss) (Max) @ Vds | 6696pF @ 25V |
| Rds On (Max) @ Id, Vgs | 960mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |
