TYPE | DESCRIPTION |
Mfr | Microsemi Corporation |
Series | - |
Package | Bulk |
Product Status | OBSOLETE |
Package / Case | SP1 |
Mounting Type | Chassis Mount |
Configuration | 2 N-Channel (Half Bridge) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Technology | MOSFET (Metal Oxide) |
Power - Max | 357W |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 14A |
Input Capacitance (Ciss) (Max) @ Vds | 6696pF @ 25V |
Rds On (Max) @ Id, Vgs | 960mOhm @ 12A, 10V |
Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Supplier Device Package | SP1 |